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The Effect of Oxygen Exposure on Pentacene Thin Film Electronic Structure

Published online by Cambridge University Press:  01 February 2011

A. Vollmer
Affiliation:
Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H., Albert-Einstein-Str. 15, D-12489 Berlin, Germany
O. D. Jurchescu
Affiliation:
Materials Science Center, Rijksuniversiteit Groningen, NL-9747 AG Groningen, Netherlands
I. Arfaoui
Affiliation:
Materials Science Center, Rijksuniversiteit Groningen, NL-9747 AG Groningen, Netherlands
I. Salzmann
Affiliation:
Humboldt-Universität zu Berlin, Institut f. Physik, Newtonstr. 15, D-12489 Berlin, Germany
T. T. M. Palstra
Affiliation:
Materials Science Center, Rijksuniversiteit Groningen, NL-9747 AG Groningen, Netherlands
P. Rudolf
Affiliation:
Materials Science Center, Rijksuniversiteit Groningen, NL-9747 AG Groningen, Netherlands
J. Niemax
Affiliation:
Universität Stuttgart, 3. Physikalisches Institut, D-70550 Stuttgart, Germany
J. Pflaum
Affiliation:
Universität Stuttgart, 3. Physikalisches Institut, D-70550 Stuttgart, Germany
J. P. Rabe
Affiliation:
Humboldt-Universität zu Berlin, Institut f. Physik, Newtonstr. 15, D-12489 Berlin, Germany
N. Koch
Affiliation:
Humboldt-Universität zu Berlin, Institut f. Physik, Newtonstr. 15, D-12489 Berlin, Germany
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Abstract

We use ultraviolet photoelectron spectroscopy to investigate the effect of oxygen and air exposure on the electronic structure of pentacene thin films. It is found that O2 and water do not react noticeably with pentacene, whereas singlet oxygen/ozone readily oxidize the organic compound. Also, we obtain no evidence for considerable p-type doping of pentacene by O2 at low pressure. However, oxygen exposure lowers the hole injection barrier at the interface between Au and pentacene by 0.25 eV, presumably due to a modification of the Au surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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