Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-z65vl Total loading time: 0.257 Render date: 2021-06-20T08:04:57.005Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Effect of Nh3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors

Published online by Cambridge University Press:  10 February 2011

R.V.R. Murthy
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1, murthy@venus.uwaterloo.ca
Q. Ma
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1, murthy@venus.uwaterloo.ca
A. Nathan
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1, murthy@venus.uwaterloo.ca
S.G. Chamberlain
Affiliation:
DALSA Inc., 605 McMurray Rd., Waterloo, Ontario, Canada, N2V 2E9
Corresponding
E-mail address:
Get access

Abstract

In this paper, we present measurement results of stability and leakage current characteristics in inverted staggered hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) for different compositions of the top (passivation) nitride (a-SiNx:H). Here, we varied the deposition parameters, i.e., the ammonia (NH3) to silane (SiH4) gas ratio, of the passivation material for fixed composition of the (nitrogen-rich) gate nitride. When stressed with a prolonged gate bias, the observed shift in both threshold voltage (VT) and leakage current was largest in samples where the gas ratio (R = NH3/SiH4) was small. In the samples considered, R varied from 5 to 25. The shift in VT can be attributed to injection of energetic carriers from the a-Si:H and their subsequent trapping in the top a-SiNx:H layer. The trapping is reduced when the layer is nitrogen-rich.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Tsukada, T. in Flat Panel Display Materials II, edited by Hatalis, M.K., Kanicki, J., Summers, C.J., Funada, F. (Mater. Res. Soc. Symp. Proc. 424, Pittsburgh, PA, 1996) pp. 38.Google Scholar
2 Street, R.A., Weisfield, R., Nelson, S., Nylen, P. and Wu, X.D. in Amorphous Silicon Technology, edited by Schiff, E.A., Thompson, M.J., Madan, A., Tanaka, K., LeComber, P.G. (Mater. Res. Soc. Symp. Proc. 297, Pittsburgh, PA, 1993) pp. 957962.Google Scholar
3 Schropp, R.E.I. and Verwey, J.F., Appl. Phys. Lett. 50, 185 (1987).CrossRefGoogle Scholar
4 Hiranaka, K., Yoshimura, T. and Yamaguchi, T., J. Appl. Phys. 62, 2129 (1987).CrossRefGoogle Scholar
5 Powell, M.J., IEEE Trans. Electron Devices 36, 2753 (1989).CrossRefGoogle Scholar
6 Nakamura, T., Yamada, T., Takinami, M., Suzuki, T., Hamano, T., Ozawa, T., Tomiyama, S., MacDonald, D., Weisfield, R., Fennell, L., Tuan, H. and Thompson, M. in International Electron Devices Meeting, edited by Griffing, B. (Electron Devices Society of IEEE, New York, 1988) pp. 272275.CrossRefGoogle Scholar
7 Choi, H.S., Kim, Y.S., Lee, S.K., Yoon, J.K., Park, W.S. and Han, M.K. in Amorphous and Microcrystalline Silicon Technology, edited by Schiff, E.A., Hack, M., Madan, A., Powell, M. and Matsuda, A. (Mater. Res. Soc. Proc. 336, Pittsburg, PA, 1994) pp. 793797.Google Scholar
8 Possin, G.E. and Su, F.C. in Amorphous Silicon Technology, edited by Madan, A., Thompson, M.J., Taylor, P.C., LeComber, P.G. and Hamakawa, Y. (Mater. Res. Soc. Proc. 118, Pittsburg, PA, 1988) pp. 255260.Google Scholar
9 Slade, H.C., Shur, M.S., Deane, S.C. and Hack, M., Appl. Phys. Lett. 69, 2560 (1996).CrossRefGoogle Scholar
10 Murthy, R.V.R., Periera, D., Park, B., Nathan, A. and Chamberlain, S.G., to be presented at 1998 MRS Spring Meeting, San Francisco, CA.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Effect of Nh3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Effect of Nh3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Effect of Nh3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *