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Effect of Low Level Doping of Boron and Phosphorus on the Properties of Amorphous Silicon Films

Published online by Cambridge University Press:  26 February 2011

N. T. Tran
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota 55144
K. A. Epstein
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota 55144
D. P. Grimmer
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota 55144
G. D. Vernstrom
Affiliation:
Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota 55144
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Abstract

Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) was studied. Doping level of both boron and phosphorus was in the range of 1017 atoms/cm3. Apparent improvement in the stability of dark and photoconductivity of a-Si:H films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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