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The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys

Published online by Cambridge University Press:  21 February 2011

C.M. Fortmann
Affiliation:
University of Delaware, Institute of Energy Conversion Newark, Delaware 19716
D.E. Albright
Affiliation:
University of Delaware, Institute of Energy Conversion Newark, Delaware 19716
I.H. Campbell
Affiliation:
Princeton University Department of Electrical Engineering Princeton, NJ 08544
P.M. Fauchet
Affiliation:
Princeton University Department of Electrical Engineering Princeton, NJ 08544
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Abstract

The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the electron mobility of a-Ge:H is a factor of ten less than that of a-Si:H. Micro-crystalline silicon films have greater excess photo-conductivity as compared to a-Si:H predominantly due to longer effective lifetimes. Films containing micro-crystalline silicon in a matrix of a-SiGe:H have been prepared and are found to have comparatively poor transport.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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