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The Effect of Channel Recess and Passivation on 4H-SiC MESFETs

Published online by Cambridge University Press:  11 February 2011

Ho-Young Cha
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Christopher I. Thomas
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Goutam Koley
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Lester F. Eastman
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Michael G. Spencer
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
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Abstract

Channel-recessed 4H-SiC MESFETs were fabricated and demonstrated excellent small signal characteristics. A saturated current of 250 − 270 mA/mm at Vgs = 0 V and a maximum transconductance of 40 − 45 mS/mm were measured for channel-recessed devices with a gate length of 0.45 m. The three-terminal breakdown voltages (Vds) range from 120 V to 150 V. The Ft and Fmax of the 2 × 200 m devices were measured to be 14.5 GHz and 40 GHz, respectively. The channel recess technique results in a lower saturation current but higher breakdown voltage which makes it possible for the devices to operate at high voltages. Si3N4 passivation suppresses the instability in DC characteristics and improves CW power performance by reducing the surface effects. Less dispersion in the drain current during a power sweep was observed after passivation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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