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Effect of Buffer or Barrier Layer on Bistability for Nonvolatile Memory Fabricated with Al Nanocrystals Embedded in α-NPD

Published online by Cambridge University Press:  26 February 2011

Sung-ho Seo
Affiliation:
spatent@hanmail.net, Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of, 82-2-2220-0234, 82-2-2296-1179
Woo-sik Nam
Affiliation:
ahha50@paran.com, Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Jae-seok Kim
Affiliation:
hunter0617@hanmail.net, Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Chang-hyup Shin
Affiliation:
chang1541@hanmail.net, Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Se-yun Lim
Affiliation:
limseyun@hanmail.net, Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Jea-gun Park
Affiliation:
parkjgl@hanyang.ac.kr, Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Yoon-joong Kim
Affiliation:
y-jkim@kbsi.re.kr, Korea Basic Science Institute, Electron Microscopy Team, 52 Eoeun-dong, Yusung-gu, Daajeon, 305-333, Korea, Republic of
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Abstract

Recently, low molecular organic non-volatile memories have been developed as a next generation of non-volatile memory because of nano-meter device-feature size and nano-second access and store-time. We developed a non-volatile memory fabricated with the device structure of Al/ α-NPD/Al nano-crystals surrounded by Al2O3/α-NPD/Al, where α-NPD is N,N'-bis(1-naphthyl)-1,1'biphenyl4-4”diamine. One layer of Al nano-crystals with ∼20 nm-width ∼20 nm length was uniform produced between α-NPD layers, confirmed by 1.2MV high voltage transmission-electron-microscope. This device showed Vth of 3.0 V, Vprogram of 4.3 V, and Verase of 6.3 V. Particularly, this device exhibited an excellent non-volatile memory behavior performing the bi-stability (Iprogrm/Ierase) of >1×102, program/erase cycles of >1×105 and multi-levels. In addition, previous reports about low molecular organic non-volatile memories have showed a bad reproducible memory characteristic. However, this issue was completely solved via isolating Al nano-crystals embedded in α-NPD by O2 plasma oxidation. The uniformity of Vth, Vp, and Ve were 9.91%, 6.94% and 7.92%, respectively. Furthermore, the effect of buffer or barrier layer on non-volatile memory characteristics was investigate to examine the control ability for Vth, Vp, and Ve. The 0.5-nm LiF showed a barrier layer behavior suppressing the bi-stability of non-volatile memory. Otherwise, 15-nm CuPc exhibited a buffer layer behavior enhancing the bi-stability of nonvolatile memory.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Effect of Buffer or Barrier Layer on Bistability for Nonvolatile Memory Fabricated with Al Nanocrystals Embedded in α-NPD
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Effect of Buffer or Barrier Layer on Bistability for Nonvolatile Memory Fabricated with Al Nanocrystals Embedded in α-NPD
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Effect of Buffer or Barrier Layer on Bistability for Nonvolatile Memory Fabricated with Al Nanocrystals Embedded in α-NPD
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