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Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs

Published online by Cambridge University Press:  01 February 2011

Taku Tajima
Affiliation:
taku.tajima.km@gs-eng.hosei.ac.jp, Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, kajinocho, Koganeishi, Tokyo, 184-8584, Japan
Satoshi Uchiumi
Affiliation:
i06r3103@k.hosei.ac.jp, Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Kenta Tsukamoto
Affiliation:
i06r3119@k.hosei.ac.jp, Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Kazumasa Takenaka
Affiliation:
kazumasa.takenaka.pz@gs-eng.hosei.ac.jp, Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
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Abstract

Double ion implanted 4H-SiC bipolar junction transistors (BJTs) are fabricated by Al and N ion implantation to the base and emitter. The current gain of 3 is obtained at the base Al concentration of 1 × ∼ 1017 /cm3. The collector current as a function of the base Gummel number suggests that double ion implanted 4H-SiC BJT operates in the intrinsic region below the emitter in the low injection level. The high base resistance restricts the base current at VBE as low as 3 V.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Ryu, Sei-Hyung, Capell, D. Craig, and Palmour, John W., TED, 50, 774 (2003)Google Scholar
2. Lee, H.-S., Domeij, M., Zetterling, C.-M., and Ostling, M., Mater. Sci. Forum, 556, 767 (2007)Google Scholar
3. Agarwa, A.K., Ryu, Sei-Hyung, Richmond, J., Capell, C., Palmour, J.W., Balachandran, S., Chow, T.P., Geil, B., Bayne, S., Scozzie, C., and Jones, K.A., ISPSD, 24-27, 361 (2004)Google Scholar
4. Agarwa, A.K., Krishnaswami, S., Richmond, J., Capell, C., Ryu, Sei-Hyung, Palmour, J.W., Balachandran, S., Chow, T.P., Geil, B., Bayne, S., Geil, B., Scozzie, C., and Jones, K.A, ISPSD, 23-26, 271 (2005)Google Scholar
5. Shibagaki, M., Satoh, M., Numajiri, K., Kurematsu, Y., Watanabe, F., Haga, S., Miura, K., Miyagawa, S., and Suzuki, T., Mater. Sci. Forum, 527-529, 807 (2006)Google Scholar
6. Satoh, M., Miyagawa, S., Kudoh, T., Egami, A., Numajiri, K., and Shibagaki, M., Mater. Sci Forum (in press)Google Scholar
7.URL http://www.srim.org/ Ziegler, J.F. Google Scholar