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The Effect of Atomic Mixing on the Depth Profiles of Metal Markers in Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Atomic mixing effects of sputter depth-profiles are modeled by a diffusion theory with a depth-dependent diffusion constant D. The model is compared to SIMS depth profiles, using 5 keV Ar+ bombardment of dilute thin-film multilayers of Al, Ag, Ti and Mo in silicon. The experimental values of D can be explained by cascade mixing and radiation enhanced diffusion within the cascade for Al, Ag and Ti markers but not for the Mo marker.
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- Copyright © Materials Research Society 1984
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