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Effect of Argon and Hydrogen on Deposition of Silicon from Tetrachlorosilane in Cold Plasmas

Published online by Cambridge University Press:  26 February 2011

R. R. Manory
Affiliation:
NASA-NRC Research Associate, National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
R. Avni
Affiliation:
Materials Engineering Department, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva, Israel
A. Grill
Affiliation:
Materials Engineering Department, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva, Israel
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Abstract

The roles of Ar and H2 on the decomposition of SiCl4 1n cold plasma were Investigated by Langmulr probes and mass spectrometry. Decomposition of the reactant by Ar only has been found to be very slow. In presence of H2 in the plasma SiCl4 is decomposed by fast radical-molecule reactions which are further enhanced by Ar due to additional 1on-molecule reactions in which more H radicals are produced. A model for the plasma-surface Interactions during deposition of pC-S1 1n the Ar + H2 + SiCl4 system is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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Effect of Argon and Hydrogen on Deposition of Silicon from Tetrachlorosilane in Cold Plasmas
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