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A Dual-RF-Plasma Approach for Controlling the Graphitic Order and Diameters of Vertically-Aligned Multiwall Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

Jitendra Menda
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Lakshman Kumar Vanga
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Benjamin Ulmen
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Yoke Khin Yap*
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Zhengwei Pan
Affiliation:
Department of Materials Science and Engineering, University of Tennessee
Ilia N. Ivanov
Affiliation:
Department of Materials Science and Engineering, University of Tennessee
Alex A. Puretzky
Affiliation:
Department of Materials Science and Engineering, University of Tennessee
David B. Geohegan
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory
*
* Email: ykyap@mtu.edu
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Abstract

Plasma enhanced chemical vapor deposition (PECVD) is a unique technique for growing vertically-aligned multiwall carbon nanotubes (VA-MWNTs) at controllable tube densities. This technique is of considerable importance for low temperature growth of VA-MWNTs at desired locations. However, the graphitic order of these MWNTs is inferior to those grown by laser ablation, arc discharge, and thermal CVD techniques. Previously, these VA-MWNTs were grown by a one-plasma approach (DC, microwave etc), either for gas decomposition or substrate biasing. Here, we describe a dual-RF plasma enhanced CVD (dual-RF-PECVD) technique that offers unique capability for controlling the graphitic order and diameters of VA-MWNTs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

[1]. Ren, Z. F., Huang, Z. P., Xu, J. W., Wang, J. H., Bush, P., Siegal, M. P., and Provencio, P. N., Science 282 (1998) 1105.Google Scholar
[2]. Merkulov, V. I., Lowndes, D. H., Wei, Y. Y., Gres, G., and Voelkl, E., Appl. Phys. Lett 76 (2000) 3555.Google Scholar
[3]. Murakami, H., Hirakawa, M, Tanaka, C., and Yamakawa, H., Appl. Phys. Lett. 76 (2000) 1776.Google Scholar
[4]. Chhowalla, M., Teo, K. B. K., Ducati, C., Rupesinghe, N. L., Amaratunga, G. A. J., Ferrari, A., Roy, D., Robertson, J., and Milne, W. I., J. Appl. Phys. 90 (2002) 5308.Google Scholar
[5]. Hirao, T., Ito, K., Furuta, H., Yap, Y. K., Ikuno, T., Honda, S., Mori, Y., Sasaki, T., Oura, K., Jpn. J. Appl. Phys. 40 (2001) L631.Google Scholar