Skip to main content Accessibility help
×
Home
Hostname: page-component-684899dbb8-662rr Total loading time: 0.22 Render date: 2022-05-28T23:56:52.043Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true }

Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI

Published online by Cambridge University Press:  17 March 2011

A. J. Smith
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
B. Colombeau
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
R. Gwilliam
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
E. Collart
Affiliation:
Applied Materials UK Ltd, Parametric and Conductive Implant Division, Horsham, RH13 5PX, UK
N.E.B. Cowern
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
B. J. Sealy
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
Get access

Abstract

Silicon on insulator (SOI - Smartcut®) wafers were implanted with 1MeV and 300keV silicon ions to doses of 3.8x1015 cm−2 and 3x1014 cm−2, respectively, in order to modify the vacancy concentration in a controlled way. Boron was then implanted at 2keV to a dose of 1×1015 cm−2 into the near-surface part of the vacancy-engineered region. Atomic profiles were determined using SIMS and electrical profiles were measured using a novel Differential Hall Effect (DHE) technique, which enables profiling of electrically active dopants with a nanometer depth resolution. The electrical profiles provide pairs of carrier concentration and mobility values as a function of depth. The buried oxide (BOX) is proven to restrict the back diffusing interstitials positioned below the BOX from entering the silicon top layer and interacting with the boron profile. Also an increase of ∼50% in boron activation is achieved when a co-implant is used. However, SOI shows a reduced degree of activation when compared to bulk silicon, with or without a co-implant.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Winterbon, K., Rad. Eff. 46, 181 (1980)CrossRefGoogle Scholar
2. Venezia, V., Haynes, T., Agarwal, A., Pelaz, L.. Gossmann, H.-J., Jacobson, D., Eaglesham, D., Appl. Phys. Lett. 74, 1299 (1999)CrossRefGoogle Scholar
3. Shao, L., Thompson, P., Bleiler, R., Baumann, S., Wang, X., Chen, H., Liu, J., Chu, W., J. Appl. Phys. 92, 5793 (2002)CrossRefGoogle Scholar
4. Kalyanaraman, R., Venezia, V., Pelaz, L., Haynes, T., Gossmann, H.-J., Rafferty, C., Appl. Phys. Lett. 82, 215 (2003)CrossRefGoogle Scholar
5. Nejim, A., Sealy, B., Semicond. Sci. Technol. 18, 839 (2003)CrossRefGoogle Scholar
6. Shao, L., Wang, X., Liu, J., Bennett, J., Larsen, L., Chu, W., J. Appl. Phys. 92, 4307 (2002)CrossRefGoogle Scholar
7. Shao, L., Liu, J., Chen, Q., Chu, W., Mat. Sci. Eng. R42 65 (2003)CrossRefGoogle Scholar
8. Colombeau, B., Smith, A.J., Cowern, N., Pawlak, B., Cristiano, F., Duffy, R., Claverie, A., Ortiz, C., Pichler, P., Lampin, E., Zechner, C., Mat. Res. Symp. Proc. 810, C3.6.1 (2004)CrossRefGoogle Scholar
9. Alzanki, T., Gwilliam, R., Emerson, N., Tabatabaian, Z., Jeynes, C., Sealy, B., in press, Semicond. Sci. Technol. (2004)Google Scholar
10. Sasaki, Y., Itoh, K., Inoue, E., Kishi, D., Mitsuishi, T., Sol. Stat. Elec. 31, 5 (1988)CrossRefGoogle Scholar
11. Holland, O., White, C., Nucl. Inst. Meth. Phys. Res. B59/60, 353 (1991)CrossRefGoogle Scholar
12. Uchida, H., Ichimura, M., Arai, E., Jpn. J. Appl. Phys. 41, 4436 (2002)CrossRefGoogle Scholar
13. Cowern, N., Cacciato, A., Custer, J., Saris, F., Vandervorst, W., Appl. Phys. Lett. 68, 1150 (1996)CrossRefGoogle Scholar
14. ASTM F723-88Google Scholar
15. Thurber, W., Mattis, R., Liu, Y., Filliben, J., J. Electrochem.Soc. 127, 1807 (1980)CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *