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Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI

Published online by Cambridge University Press:  17 March 2011

A. J. Smith ,
B. Colombeau ,
R. Gwilliam ,
E. Collart ,
N.E.B. Cowern  and
B. J. Sealy
A. J. Smith
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
B. Colombeau
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
R. Gwilliam
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
E. Collart
Affiliation:
Applied Materials UK Ltd, Parametric and Conductive Implant Division, Horsham, RH13 5PX, UK
N.E.B. Cowern
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
B. J. Sealy
Affiliation:
Advanced Technology Institute, Surrey University, Guildford, GU2 7XH, U.K.
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Abstract

Silicon on insulator (SOI - Smartcut®) wafers were implanted with 1MeV and 300keV silicon ions to doses of 3.8x1015 cm−2 and 3x1014 cm−2, respectively, in order to modify the vacancy concentration in a controlled way. Boron was then implanted at 2keV to a dose of 1×1015 cm−2 into the near-surface part of the vacancy-engineered region. Atomic profiles were determined using SIMS and electrical profiles were measured using a novel Differential Hall Effect (DHE) technique, which enables profiling of electrically active dopants with a nanometer depth resolution. The electrical profiles provide pairs of carrier concentration and mobility values as a function of depth. The buried oxide (BOX) is proven to restrict the back diffusing interstitials positioned below the BOX from entering the silicon top layer and interacting with the boron profile. Also an increase of ∼50% in boron activation is achieved when a co-implant is used. However, SOI shows a reduced degree of activation when compared to bulk silicon, with or without a co-implant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C3.8
Copyright
Copyright © Materials Research Society 2004

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