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Dopant segregation to {311} defects during low temperature annealing

Published online by Cambridge University Press:  10 February 2011

Kenji Taniguchi ,
Tomoya Saito ,
Jianxin Xia ,
Ryangsu Kim ,
Takenori Aoki ,
Hiroyuki Kobayashi  and
Yoshinari Kamakura
Kenji Taniguchi
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan, taniguti@eie.eng.osaka-u.ac.jp
Tomoya Saito
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan
Jianxin Xia
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan
Ryangsu Kim
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan
Takenori Aoki
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan
Hiroyuki Kobayashi
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan
Yoshinari Kamakura
Affiliation:
Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871 Japan
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Abstract

Boron segregation to {311} defects and transient enhanced diffusion (TED) of boron atoms during thermal annealing were investigated in detail using implanted superlattice and Si bulk wafers. We observed that (1)boron atoms segregate to {311} defects during low temperature annealing, (2){311} defects were formed in the area where the self-interstitial concentration exceeds 3×1017cm3, (3)free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 155
Copyright
Copyright © Materials Research Society 1999

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References

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