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Discharge Annealing of Ion Implanted Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
A gas discharge system is used to produce a large area electron beam which can be used to angeal ion-implanted semiconductors. The sample temperature rise and amorphousto-single-crystal regrowth were monitored using the change in optical reflectivity.
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- Copyright © Materials Research Society 1982
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