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The Direct Photo-CVD of Silicon Dioxide from Si2H6 and N2O3

Published online by Cambridge University Press:  25 February 2011

Yashraj K. Bhatnagar  and
W. I. Milne
Yashraj K. Bhatnagar
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 lPZ, England.
W. I. Milne
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 lPZ, England.
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Abstract

The direct photo-CVD of silicon dioxide on c-Si substrates has been achieved using a new combination of Si2H6 and N2O3 gases, with an external deuterium lamp as the VUV source. The variation of the deposition rate and the refractive index with process parameters is reported. FTIR studies on these oxides show that the oxide is very nearly stoichiometric with no Si-N bonds and only trace amounts of Si-H bonds. C-V, I-V and breakdown measurements made on these films are reported. a-Si:H thin film transistors have also been fabricated using this oxide as the gate dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 513
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Okuyama, M., Toyoda, Y. and Hamakawa, Y., Jpn. J. Appl. Phys., vol.23, No. 2, Feb. 1984, pL97.CrossRefGoogle Scholar
2. Tarui, Y., Hidaka, J. and Aota, K., Jpn. J. Appl. Phys., vol.23, No. 11, Nov. 1984, pL827.CrossRefGoogle Scholar
3. Mishima, Y., Hirose, M., Osaka, Y. and Ashida, Y., J. Appl. Phys., 55(4), Feb. 1984, p 1234.CrossRefGoogle Scholar
4. Marks, J. and Robertson, R.E., Appl. Phys. Lett., 52(10), Mar 1988, p810.CrossRefGoogle Scholar
5. Peters, J.W., Tech. Digest Intnl. Electron Dev. Meet., 1981, p240.Google Scholar
6. Robertson, P.A. and Milne, W.I., Proc. MRS Symp. B, Fall Meet., Boston, Dec. 1986, p257.Google Scholar
7. Bhatnagar, Y.K. and Milne, W.I., to be published in Thin Solid Films.Google Scholar
8. Okuyama, M., Fujiki, N., Inoue, K. and Hamakawa, Y., Jpn. J. Appl. Phys., vol.26, No. 6, June 1987, pL908.CrossRefGoogle Scholar
9. Pai, P.G., Chao, S.S. and Takagi, Y., J. Vac. Sci. Technol. A, vol.4(3), May/June 1986, p689.CrossRefGoogle Scholar
10. Boyd, I.W., Electron. Lett., vol.24, No. 17, Aug. 1988, p1062.CrossRefGoogle Scholar