Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-66nw2 Total loading time: 0.259 Render date: 2021-12-03T11:59:02.859Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Dielectric Function of AlN Grown on Si (111) by MBE

Published online by Cambridge University Press:  10 February 2011

Stefan Zollner
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Atul Konkar
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
R. B. Gregory
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
S. R. Wilson
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
S. A. Nikishin
Affiliation:
Texas Tech University, Dept. of Electrical Engineering, Box 43102, Lubbock, TX 79409
H. Temkin
Affiliation:
Texas Tech University, Dept. of Electrical Engineering, Box 43102, Lubbock, TX 79409
Get access

Abstract

We measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Madelung, O., Semiconductors - Basic Data, 2nd ed. (Springer, Berlin, 1996), p. 69.10.1007/978-3-642-97675-9CrossRefGoogle Scholar
2. Slack, G.A., J. Phys. Chem. Solids 34, 321(1973).10.1016/0022-3697(73)90092-9CrossRefGoogle Scholar
3. Loughin, S. and French, R.H., in Handbook of Optical Properties of Solids, edited by E.D., Palik, (Academic, Orlando, 1998), p. 373, and references therein.Google Scholar
4. Hong, S.Q., Liaw, H.M., Linthicum, K., Davis, R.F., Fejes, P., Zollner, S., Kottke, M., Wilson, S.R., this volume.Google Scholar
5. Jones, D.J., French, R.H., Miillejans, H., Loughin, S., Dorneich, A.D., Carcia, P.F., (in print).Google Scholar
6. Ambacher, O., Arzberger, M., Brunner, D., Angerer, H., Freudenberg, F., Esser, N., Wethkarnp, T., Wilmers, K., Richter, W., Stutzmann, M., MRS Internet Journal of Nitride Semiconductor Research 2, Article 22 (1997).10.1557/S1092578300001484CrossRefGoogle Scholar
7. Edwards, N.V., Bremser, M.D., Weeks, T.W., Kern, R.S., Davis, R.F., and Aspnes, D.E., Appl. Phys. Lett. 69, 2065(1996).10.1063/1.116881CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Dielectric Function of AlN Grown on Si (111) by MBE
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Dielectric Function of AlN Grown on Si (111) by MBE
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Dielectric Function of AlN Grown on Si (111) by MBE
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *