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Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba 0.96 Ca 0.04 Ti 0.84Zr 0.16 O3 Thin Films on Pt/MgO

Published online by Cambridge University Press:  01 February 2011

T.S. Kalkur
Affiliation:
Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs, CO 80933-7150.
Woo-Chul Yi
Affiliation:
Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs, CO 80933-7150.
Elliott Philofsky
Affiliation:
Applied Ceramics Research Company, Colorado Springs, CO 80919.
Lee Kammerdiner
Affiliation:
Applied Ceramics Research Company, Colorado Springs, CO 80919.
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Abstract

Mg- doped Ba0.96 Ca0.04 Ti0.84 Zr0.16 O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structures of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba 0.96 Ca 0.04 Ti 0.84Zr 0.16 O3 Thin Films on Pt/MgO
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Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba 0.96 Ca 0.04 Ti 0.84Zr 0.16 O3 Thin Films on Pt/MgO
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