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Development of Improved Precursors for the MOCVD of Bismuth Titanate
Published online by Cambridge University Press: 11 February 2011
Abstract
Bismuth titanate thin films have been grown by liquid injection MOCVD using Bi(mmp)3 in combination with the new Ti precursors Ti(OPri)2(mmp)2 and Ti(mmp)4 (mmp = OCMe2CH2OMe). Films were grown on Si(100) substrates over the temperature range 300 – 600°C, and were shown to consist predominantly of the Bi4Ti3O12 phase at substrate temperatures > 500°C.
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