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Deuterium Out-Diffusion Kinetics in Magnesium-Doped GaN

Published online by Cambridge University Press:  01 February 2011

Jacques Chevallier
Affiliation:
jacques.chevallier@cnrs-bellevue.fr, CNRS, GEMaC, 1 place A.Briand, Meudon, 92190, France, 33 1 45 07 53 40, 33 1 45 07 58 41
François Jomard
Affiliation:
francois.jomard@cnrs-bellevue.fr, CNRS/Université de Versailles, Groupe d'Etude de la Matière Condensée, 1 place A.Briand, Meudon, 92190, France
Norbert H. Nickel
Affiliation:
nickel@hmi.de, Hahn-Meitner-Institut, Kekuléstrasse 5, Berlin, 12489, Germany
Philippe de Mierry
Affiliation:
Philippe.De.Mierry@crhea.cnrs.fr, CNRS, Centre de Recherche sur l'Hétéroépitaxie et Applications, Parc de Sophia-Antipolis, Rue B.Grégory, Valbonne, 06560, France
Sébastien Chenot
Affiliation:
Sebastien.Chenot@crhea.cnrs.fr, CNRS, Centre de Recherche sur l'Hétéroépitaxie et Applications, Parc de Sophia-Antipolis, Rue B.Grégory, Valbonne, 06560, France
Yvon Cordier
Affiliation:
Yvon.Cordier@crhea.cnrs.fr, CNRS, Centre de Recherche sur l'Hétéroépitaxie et Applications, Parc de Sophia-Antipolis, Rue B.Grégory, Valbonne, 06560, France
Marie-Antoinette di Forte-Poisson
Affiliation:
marie-antoinette.poisson@3-5lab.fr, Alcatel-Thales, III-V Laboratory, Marcoussis, 91460, France
Sylvain Delage
Affiliation:
sylvain.delage@3-5lab.fr, Alcatel-Thales, III-V Laboratory, Marcoussis, 91460, France
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Abstract

A series of isothermal annealing experiments have been performed in the range 790–920°C under N2 flow in order to study the deuterium out-diffusion kinetics of Mg-doped GaN grown on sapphire under deuterated ammonia. The deuterium concentration was measured by SIMS analysis before and after each annealing step. The kinetics closely follow a first-order law. The activation energy related to the deuterium out-diffusion process is 3.1 eV. In addition, deuterium effusion measurements were performed measuring the molecular HD flux while the specimens were annealed in ultra high vacuum with a linear heating rate. In contrast to SIMS, this method detects the species that migrated out of the sample. Effusion peaks of the HD flux at 360 and 490°C are attributed to the fragmentation of adsorbed CHxDy complexes. The molecular HD flux starts increasing at 800°C which is the onset of the GaN decomposition and has its maximum at 920°C. This HD flux is accompanied by the desorption of H and D containing radicals and molecules desorbing above 900°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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