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Determining the Growth Mode of SrTiO3 (001) Homoepitaxy via Pulsed Laser Deposition using in situ X-Ray Reflectivity

Published online by Cambridge University Press:  11 June 2019

John Ferguson
Affiliation:
Cornell University, College of Engineering
Gokhan Arikan
Affiliation:
Cornell University, College of Engineering
Aram Amassian
Affiliation:
Cornell University, College of Engineering
Darren Dale
Affiliation:
Cornell University, College of Engineering
Arthur Woll
Affiliation:
Cornell University, College of Engineering
Joel Brock
Affiliation:
Cornell University, College of Engineering
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Abstract

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This is a copy of the slides presented at the meeting but not formally written up for the volume.

Abstract

Homoepitaxial SrTiO3 thin films were grown on SrTiO3 (001) via Pulsed Laser Deposition. The growth was monitored in real-time by in situ X-ray reflectivity measurements at the anti-Bragg point of the (00L) Crystal Truncation Rod. Due to the need for a large X-ray intensity to monitor the anti-Bragg position, these experiments were performed at the Cornell High Energy Synchrotron Source (CHESS). We investigated the role of laser repetition rate and substrate temperature for films deposited at an O2 background pressure of 10-6 Torr. We observe a transition in growth mode from layer-by-layer to step-flow with increasing temperature while keeping laser repetition rate constant. We observed a similar transition in the growth mode when the substrate temperature is held constant and the laser repetition rate is decreased. The surface miscut is also observed to play a similar role. We show that this transition can be described in terms of the deposition rate, diffusion length, and step spacing.

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Slide Presentations
Copyright
Copyright © Materials Research Society 2006

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Determining the Growth Mode of SrTiO3 (001) Homoepitaxy via Pulsed Laser Deposition using in situ X-Ray Reflectivity
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Determining the Growth Mode of SrTiO3 (001) Homoepitaxy via Pulsed Laser Deposition using in situ X-Ray Reflectivity
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