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Determination Of Intermetallic Formation Mechanism Using Differential Scanning Calorimetry Of Multilayered Thin Films
Published online by Cambridge University Press: 25 February 2011
Abstract
The ability to determine which growth mechanism (interface-reaction-rate-limited vs. diffusion-limited) of intermetallic formation by interfacial reactions using differential scanning calorimetry (DSC) is demonstrated. Suicide formation in multilayered thin films of chromium and amorphous silicon was chosen as a model system. It is shown that suicide formation in this system followed a linear rate law corresponding to an interface-reaction-rate-limited growth mechanism. An activation energy and pre-exponential for the rate constant were determined.
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- Copyright © Materials Research Society 1992