Hostname: page-component-5d59c44645-mrcq8 Total loading time: 0 Render date: 2024-03-01T16:46:19.253Z Has data issue: false hasContentIssue false

Detection of Magnetic Resonance on Shallow Donor - Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC

Published online by Cambridge University Press:  21 February 2011

E.R. Glaser
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5347
T.A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5347
S.W. Brown
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5347
J.A. Freitas Jr.
Affiliation:
Sachs Freeman Associates, Landover, Maryland, 20785
W.G. Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
M.D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
T.W. Weeks
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
Get access

Abstract

Photoluminescence (PL) and optically-detected magnetic resonance (ODMR) experiments have been performed on undoped GaN epitaxial layers grown on 6H-SiC substrates. The defects observed in these films are compared with those found from previous ODMR studies of undoped GaN layers grown on sapphire substrates. Strong, sharp donor-bound exciton bands at 3.46 -3.47 eV and weak, broad emission bands at 2.2 eV were observed from several 0.7 and 2.6 μm-thick films. In addition, fairly strong shallow donor - shallow acceptor (SD-SA) recombination with a zero-phonon-line at 3.27 eV was found for GaN layers less than 1 μm-thick. The first observation of magnetic resonance on this SD-SA recombination from undoped GaN is reported in this work. Two magnetic resonance features attributed to effective-mass (EM) and deep-donor (DD) states were detected on the 2.2 eV emission bands from all the GaN/6H-SiC films. These resonances were observed previously on similar emission from undoped GaN layers grown on sapphire substrates. The same EM donor resonance, though much weaker, was also found on the SD-SA recombination. However, a resonance associated with shallow acceptor states was not observed on this emission. The weakness of the donor resonance arises from the weak spin-dependence of the recombination mechanism involving spin-thermalized shallow acceptors. The absence of an EM acceptor is due to the broadening of the resonance through the spreading of the acceptor g-values by random strains in these films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Weeks, T.W. Jr., Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
2 Glaser, E.R., Kennedy, T.A., Crookham, H.C., Freitas, J.A. Jr., Asif Khan, M., Olson, D.T., and Kuznia, J.N., Appl. Phys. Lett. 63, 2673 (1993).Google Scholar
3 Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A. Jr., Asif Khan, M., Olson, D.T., and Kuznia, J.N., Phys. Rev. B 51, 13326 (1995).Google Scholar
4 Glaser, E.R., in Proceedings of the 18th International Conference on Defects in Semiconductors, to be published.Google Scholar
5 Dingle, R., Sell, D.D., Stokowski, S.E., and Ilegems, M., Phys. Rev. B 4, 1211 (1971).Google Scholar
6 Dingle, R. and Ilegems, M., Solid State Commun. 9, 175 (1971).Google Scholar
7 Carlos, W.E., Freitas, J.A. Jr., Asif Khan, M., Olson, D.T., and Kuznia, J.N., Phys. Rev. B 48, 17878 (1993).Google Scholar
8 Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980).Google Scholar
9 Suski, T., Perlin, P., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., and Moustakas, T.D., Appl. Phys. Lett. 67, 2188 (1995), and references therein.Google Scholar
10 Götz, W., Johnson, N.M., Street, R.A., Amano, H., and Akasaki, I., Appl. Phys. Lett. 66, 1340 (1995).Google Scholar
11 Romanov, N.G., Vetrov, V.V., and Baranov, P.G., Sov. Phys. Semicond. 20, 96 (1986).Google Scholar
12 Shan, W., Schmidt, T.J., Yang, X.H., Hwang, S.J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 985 (1995).Google Scholar
13 Pake, G.E. and Estle, T.L., The Physical Principles of Electron Paramagnetic Resonance (Benjamin, Reading, MA, 1973).Google Scholar
14 Si Dang, Le, Lee, K.M., Watkins, G.D., and Choyke, W.J., Phys. Rev. Lett. 45, 390 (1980).Google Scholar
15 Patel, J.L., Nicholls, J.E., and Davies, J.J., J.Phys. C 14, 1339 (1981).Google Scholar
16 Viohl, I., Ohlsen, W.D., and Taylor, P.C., Phys. Rev. B 44, 7975 (1991).Google Scholar
17 See, e.g., Mehran, F., Morgan, T.N., Title, R.S., and Blum, S.E., J. Mag. Res. 6, 620 (1972).Google Scholar
18 Fischer, S., Wetzel, C., Haller, E.E., and Meyer, B.K., Appl. Phys. Lett. 67, 1298 (1995).Google Scholar
19 Abernathy, C.R., MacKenzie, J.D., Pearton, S.J., and Hobson, W.S., Appl. Phys. Lett. 66 1969 (1995).Google Scholar