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Deposition of Dielectric Thin Films by Atomic Layer Epitaxy and Their Application for Electroluminescence Displays

Published online by Cambridge University Press:  21 February 2011

Dong Heon Lee
Affiliation:
Division of Advanced Materials, Electro-optic Ceramics Lab, Korea Institute of Science and Technology, Seoul 130-650, Korea
Yong Soo Cho
Affiliation:
Division of Advanced Materials, Electro-optic Ceramics Lab, Korea Institute of Science and Technology, Seoul 130-650, Korea
Jeon Kook Lee
Affiliation:
Division of Advanced Materials, Electro-optic Ceramics Lab, Korea Institute of Science and Technology, Seoul 130-650, Korea
Hyung Jin Jung
Affiliation:
Division of Advanced Materials, Electro-optic Ceramics Lab, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Abstract

Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO) - coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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