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Dependence of Substrate Orientation on the Synthesis of CoSi2 Layers Formed by Ion Implantation & Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

Russell M Gwilliam
Affiliation:
Dept Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, Great Britain.
Karen J Reeson
Affiliation:
Dept Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, Great Britain.
Roger P Webb
Affiliation:
Dept Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, Great Britain.
Russell S Spraggs
Affiliation:
Dept Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, Great Britain.
Brian J Sealy
Affiliation:
Dept Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, Great Britain.
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Abstract

200 keV Co+ ions have been implanted into (100), (110) and (111) single crystal silicon substrates to doses of 2 × 1017 Co+ cm−2 and 5 × 1017 Co+ cm−2. During implantation the substrates were tilted at an angle of 70 to the incident ions and maintained at a temperature of 350°C. The experimental results, after implantation, are in close agreement with those obtained by computer simulations, which allow the single crystal orientation of the target and its position with respect to the incident ions to be specified. 5s RTA treatment at 1100°C was found to give CoSi2 layers of similar crystalline quality and resistivity to those produced by conventional furnace annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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Dependence of Substrate Orientation on the Synthesis of CoSi2 Layers Formed by Ion Implantation & Rapid Thermal Annealing
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