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Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm

Published online by Cambridge University Press:  13 June 2012

Chiaki Kudou
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 Device Module Development Center, Panasonic Corporation, 700, Tomonobu, Bizen City, Okayama, 705-8585, Japan.
Kentaro Tamura
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 ROHM Co., Ltd, 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615-8585, Japan,
Takashi Aigo
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 NIPPON STEEL CORPORATION, 20-1 Shintomi, Futtsu, Chiba-prefecture, 293-8511, Japan,
Wataru Ito
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 NIPPON STEEL CORPORATION, 20-1 Shintomi, Futtsu, Chiba-prefecture, 293-8511, Japan,
Johji Nishio
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan,
Kazutoishi Kojima
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Toshiyuki Ohno
Affiliation:
R&D Partnership for Future Power Electronics Technology (FUPET), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan 506 Hitachi, Ltd, 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo, 185-8601, Japan,
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Abstract

Homoepitaxial growth on 4H-SiC Si-face substrates with sizes corresponding to 150 mm was carried out. The influence of growth conditions for uniformity and epitaxial defect density was investigated. A 150 mm size was realized by using two 76.2 mm wafers lined up in a radial direction. C/Si ratio is found to be a major parameter for controlling triangular defect density and the generation of step bunching. As a result, the surface morphology without bunched step structure and the triangular defect density with 0.5 cm−2 were obtained by decreasing C/Si ratio to 1.0 on the size corresponding to 150 mm. Under this condition, good carrier concentration and thickness uniformity of σ/mean =15.2 % and 1.7 % could be obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm
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