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Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations

Published online by Cambridge University Press:  01 February 2011

Sei-Hyung Ryu
Affiliation:
sei-hyung_ryu@cree.com, Cree, Inc., SiC Power Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Qingchun Zhang
Affiliation:
jon_zhang@cree.com, Cree, Inc, Durham, NC, 27703, United States
Husna Fatima
Affiliation:
fatima_husna@cree.com, Cree, Inc, Durham, NC, 27703, United States
Sarah Haney
Affiliation:
saray_haney@cree.com, Cree, Inc, Durham, NC, 27703, United States
Robert Stahlbush
Affiliation:
stahlbush@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, Cree, Inc, Durham, NC, 27703, United States
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Abstract

This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high voltage 4H-SiC power devices. To show the effects, 10 kV 4H-SiC MPS (Merged PiN Schottky) diodes have been fabricated on a standard wafer and a low BPD (Basal Plane Dislocation) wafer, and their IV characteristics were evaluated before and after a forward bias stress, which resulted in minority carrier recombination and conductivity modulation in the drift epilayer of the diodes. After the stressing, the diode fabricated on standard wafer showed a significant increase in forward voltage drop, as well as a marked increase in leakage current, which were due to induction of stacking faults. The diode on the low BPD wafer showed very little change after the stress because the induction of stacking faults was minimized. Similar results were also observed on a 10 kV 4H-SiC DMOSFET. The results suggest that recombination-induced stacking faults are detrimental to all device types, and injection of minority carriers in majority carrier devices should be avoided at all times.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations
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