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Defect Distribution and Bonding Structure in High Band Gap a-Si1−xCx:H Films Deposited in H2 Dilution

Published online by Cambridge University Press:  16 February 2011

R. Galloni
Affiliation:
CNR-LAMEL, Bologna, Italy
R. Rizzoli
Affiliation:
CNR-LAMEL, Bologna, Italy
C. Summonte
Affiliation:
CNR-LAMEL, Bologna, Italy
F. Demichelis
Affiliation:
Dip. Fisica, Politecnico, Torino,Italy
F. Giorgis
Affiliation:
Dip. Fisica, Politecnico, Torino,Italy
C. F. Pirri
Affiliation:
Dip. Fisica, Politecnico, Torino,Italy
E. Tresso
Affiliation:
Dip. Fisica, Politecnico, Torino,Italy
G. Ambrosone
Affiliation:
Dip. Fisica, Universitaà, Napoli,Italy
C. Catalanotti
Affiliation:
Dip. Fisica, Universitaà, Napoli,Italy
U. Coscia
Affiliation:
Dip. Fisica, Universitaà, Napoli,Italy
P. Rava
Affiliation:
Elettrorava S.p.A, Savonera, Torino, Italy
G. Della Mea
Affiliation:
Lab. INFN Legnaro, Padova,Italy
V. Rigato
Affiliation:
Lab. INFN Legnaro, Padova,Italy
A. Madan
Affiliation:
MVSystems Ine, Golden, Colorado, USA
F. Zignani
Affiliation:
Dip. Chimica Appl., Universitaà, Bologna, Italy
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Abstract

AMorphous silicon carbide films were deposited by the PECVD technique in SiH4+CH4 gas mixtures at various CH4 flow rates with and without H2 dilution of the reactive Mixture. A detailed analysis of defect distribution in the gap has been performed by PDS and the results have been correlated with the structural (IR) and the compositional properties (RBS, ERDA). The effect of hydrogen dilution on the electronic properties of the films was investigated by dark and photo electrical conductivity Measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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Defect Distribution and Bonding Structure in High Band Gap a-Si1−xCx:H Films Deposited in H2 Dilution
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Defect Distribution and Bonding Structure in High Band Gap a-Si1−xCx:H Films Deposited in H2 Dilution
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