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Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films

Published online by Cambridge University Press:  03 September 2012

Alexander Y. Polyakov
Affiliation:
Institute of Rare Metals, Moscow, Russia, polyakov@mail.girmet.ru
Nikolai B. Smirnov
Affiliation:
Institute of Rare Metals, Moscow, Russia
Anatoliy V. Govorkov
Affiliation:
Institute of Rare Metals, Moscow, Russia
Alexander S. Usikov
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Natalie M. Shmidt
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Boris V. Pushnyi
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Denis V. Tsvetkov
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Sergey I. Stepanov
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Vladimir A. Dmitriev
Affiliation:
TDI., Inc., Gaithersburg, MD 20877, USA
Mikhail G. Mil'vidskii
Affiliation:
Institute of Rare Metals, Moscow, Russia
Vladimir F. Pavlov
Affiliation:
Institute of Rare Metals, Moscow, Russia
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Abstract

Deep levels studies on a set of n-GaN films grown by MOCVD and HVPE reveal the presence of electron traps with levels near Ec-0.25 eV, Ec-0.55 eV, Ec-0.8 eV, Ec-1 eV, hole traps with levels near Ev+0.9 eV and a band of relatively shallow states in the lower half of the bandgap. The total density of these latter states was estimated to be some 1016 cm−3 and they were tentatively associated with dislocations in GaN based on their high concentration and band-like character. None of the electron or hole traps could be unambiguously related with strong changes of diffusion lengths of minority carriers in various samples. It is proposed that such changes occur due to different surface recombination velocities. An important role of Ec-0.55 eV traps in persistent photoconductivity phenomena in n-GaN has been demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Polyakov, A.Y., in GaN and Related Materials, ed. Pearton, S.J. (Gordon&Breach Science Publishers, Singapore, 1999) pp. 173233 Google Scholar
2. Monemar, B., in the Proceedings of the 2nd Int. Conf. on Nitride Semiconductors (ICNS'97), Tokushima, Japan, 1997, pp. 68 Google Scholar
3. Lundin, W.V., Pushnyi, B.V., Usikov, A.S., Gaevski, M.E., Baidakova, M.V. and Sakharov, A.V., Inst. Phys. Conf. Ser. 155, 319 (1997)Google Scholar
4. Melnik, Yu. V., Nikitina, I.P., Zubrilov, A.S., Sitnikova, A.A. and Dmitriev, V.A., Inst. Phys. Conf. Ser. 142, 863 (1996)Google Scholar
5. Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Greve, D.W., Skowronski, M., Shin, M. and Redwing, J.M., MRS Internet J. Nitride Semicond. Res. (MIJ-NSR), 3, article 37 (1998)CrossRefGoogle Scholar
6. Polyakov, A.Y., Smirnov, N.B., Usikov, A.S., Govorkov, A.V. and Pushnyi, B.V., Solid-St. Electron., 42, 1959 (1998)CrossRefGoogle Scholar
7. Berman, L.S. and Lebedev, A.A., Capacitance Spectroscopy of Deep Centers in Semiconductors (Nauka, Leningrad, 1981) chapter 1, p. 29 (in Russian)Google Scholar

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