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Deactivation Treatments of Silicon Solar Cells for Efficiency Recovery after Illumination Degradation

Published online by Cambridge University Press:  31 January 2011

Teng-Yu Wang
Affiliation:
tengyuwang@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Terry Wang
Affiliation:
wangtaijui@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Yen-Ju Chen
Affiliation:
tsubasa910514@hotmail.com, National Tsing Hua University, Hsinchu, Taiwan, Province of China
Chwung-Shan Kou
Affiliation:
kou@phys.nthu.edu.tw, National Tsing Hua University, Hsinchu, Taiwan, Province of China
Chien-Hsun Chen
Affiliation:
Tantalus@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Wei-Lun Chang
Affiliation:
WLChang@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Sung-Yu Chen
Affiliation:
sungyuchen@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Chen-Hsun Du
Affiliation:
chdu@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Wen-Ching Sun
Affiliation:
swc416@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
Chung-Wen Lan
Affiliation:
cwlan@itri.org.tw, Industrial Technology Research Institute, Hsinchu, Taiwan, Province of China
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Abstract

We applied the deactivation treatments to p-type single crystalline silicon solar cells for deactivating the recombination-active boron-oxygen complex. The methods we used include thermal annealing treatment, capacitively couple plasma (CCP) treatment, and plasma immersion ion implantation (PIII) treatment. The results showed that all the deactivation treatments were working and the energy transfer efficiency (Eff) was thereby increased by more than 1% absolute compared to the degraded state base on the increasing of the open-circular voltage (Voc) and short-current density (Jsc). The CCP deactivated treatment got better efficiencies than PIII treatment because the PIII treatment damaged the surface of solar cells. After the forming gas treatment, the samples could be improved to close to the PIII samples due to the surface damage repairing. However, the increased efficiency could not be kept and would be degraded again after illumination.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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