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DC/AC Performance Analysis of Indium Antimonide Nanowires

Published online by Cambridge University Press:  07 July 2011

Ali Bilge Guvenc
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
Miroslav Penchev
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
Jiebin Zhong
Affiliation:
Department of Mechanical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
Cengiz Ozkan
Affiliation:
Department of Mechanical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A. Material Science and Engineering Program, University of California-Riverside, Riverside, CA 92521, U.S.A.
Mihrimah Ozkan
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
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Abstract

We investigated the electrical properties and transmission line performance of indium antimonide nanowires. The results indicate that the of nanowires suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the contact resistances, scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. nanowires show extremely inductive behavior during the AC measurements and due to these parasitic parameters, they can sustain transmission for the signals having frequencies up to 10 MHz. The bandwidth of the nanowires is directly proportional to the diameter of the nanowires. Improving the mobility to higher values and introducing de-embedding and impedance matching to the measurements and analysis could easily carry the bandwidth beyond GHz levels.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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