Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-m9wwp Total loading time: 0.228 Render date: 2021-07-31T00:40:40.787Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy

Published online by Cambridge University Press:  10 February 2011

R. Larciprete
Affiliation:
ENEA, Dip. INN/FIS, P. 0. Box 65, 00044 Frascati (RM) Italy
G. Padeletti
Affiliation:
CNR-ICMAT, via Salaria, km. 29,5 - 00016 Monterotondo Staz. (RM), Italy
S. Cozzi
Affiliation:
ENEA guest
S. Pieretti
Affiliation:
ENEA guest
Get access

Abstract

Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys onSi and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or afterthe CVD growth. The information obtained was correlated with AFM analysis results in order tooptimize the growth parameters for an improved morphological quality of the alloy layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Properties of strained and relaxed silicon germanium alloys, edited by E., Kasper, INSPEC, England, 1995 Google Scholar
2. Abelson, J. R., Sigmon, T. W., Kim, K. B., Weiner, K. H., Appl. Phys. Lett. 52, 230 (1988)CrossRefGoogle Scholar
3. Chang, Y., Chou, S. Y., Kramer, J., Sigmon, T. W., Marshall, A. F., Weiner, K. H., Appl. Phys. Lett. 58, 2150 (1991)CrossRefGoogle Scholar
4. Lombardo, S., Smith, P. M., Uttomark, M. J., Brunco, D. P., Kramer, K., Thompson, M. O., Appl. Phys. Lett. 58, 1768 (1991)CrossRefGoogle Scholar
5. Kramer, K. J., Talwar, S., Sigmon, T. W., Weiner, K. H., Appl. Phys. Lett. 91, 769 (1992)CrossRefGoogle Scholar
6. Larciprete, R., Willmott, P., Martelli, S., Cesile, M. C., Borsella, E., Chiussi, S., Gonzales, P., Leon, B., Appl. Surf. Sci. 106, 179 (1995)CrossRefGoogle Scholar
7. Padeletti, G., Larciprete, R., submitted to J. Vac. Sci. Technol. BGoogle Scholar
8. Larciprete, R., Cozzi, S., Pieretti, S., Vianey, I., Padeletti, G., Masetti, E., Montecchi, M., submitted to J. Vac. Sci. Technol. AGoogle Scholar
9. Azzam, R. M., Opt. Lett. 10, 309 (1985)CrossRefGoogle Scholar
10. Azzam, R. M., Masetti, E., Elminyawi, J. M. and Grosz, F. G., Rev. Sci. Instrm. 59,84 (1988)CrossRefGoogle Scholar
11. Masetti, E., Montecchi, M., Larciprete, R., Cozzi, S., Appl. Opt., 35, 5626 (1996)CrossRefGoogle Scholar
12. Russ, J. C. in Computer assisted microscopy, the measurement s and analysis of images, Plenum Press, N. Y., 1993 Google Scholar
13. Bruggeman, D. A. G., Ann. Phys. (Leip.) 24, 636 (1934)Google Scholar
14. Jellison, G. E. and Modine, F. A., Phys. Rev. B 27, 7466 (1983) 7466CrossRefGoogle Scholar
15. Humlicek, J. and Garrida, M., Appl. Phys. A 36, 25 (1993)Google Scholar
16. Larciprete, R. et al., submitted to J. Vac. Sci. Technol. BGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *