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Current Transport in W and WSIX Ohmic Contacts to Ingan and Inn

Published online by Cambridge University Press:  10 February 2011

C. B. Vartuli
Affiliation:
Dept of MSE, University of Florida, Gainesville FL
S. J. Pearton
Affiliation:
Dept of MSE, University of Florida, Gainesville FL
C. R. Abernathy
Affiliation:
Dept of MSE, University of Florida, Gainesville FL
J. D. MacKenzie
Affiliation:
Dept of MSE, University of Florida, Gainesville FL
M. L. Lovejoy
Affiliation:
Sandia National Laboratories, Albuquerque NM
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque NM
A. G. Baca
Affiliation:
Sandia National Laboratories, Compound Semiconductor Materials and Processes, Albuquerque NM
M. Hagerott-Crawford
Affiliation:
Sandia National Laboratories, Department of Photonics Research, Albuquerque NM
K. A. Jones
Affiliation:
Army Research Laboratory, Ft. Monmouth NJ
F. Ren
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill NJ.
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Abstract

The temperature dependence of the specific contact resistance of W and WSi0.44 contacts on n+ In0.55Ga0.35N and InN was measured in the range -50 °C to 125 °C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact structures. The data indicates the conduction mechanism is field emission for these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, ϱc ∼ 10-7 Ω ·cm2 for W and ϱc of 4× 10-7 Ω ·cm for WSix. InN metallized with W produced ohmic contacts with ϱc ∼ 10-6 Ω ·cm and ϱc ∼ 10-6 Ω ·cm. for WSix at room temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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