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Cu(In,Ga)Se2 Thin-Film Evolution During Growth from (In,Ga)2Se3 Precursors

Published online by Cambridge University Press:  21 March 2011

Jehad AbuShama
Affiliation:
Physics Department, Colorado School of Mines, Golden, CO 80401
Rommel Noufi
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Yanfa Yan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Kim Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Brian Keyes
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Pat Dippo
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Manuel Romero
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Mowafak Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Jeff Alleman
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Don L. Williamson
Affiliation:
Physics Department, Colorado School of Mines, Golden, CO 80401
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Abstract

We examined the Cu(In,Ga)Se2 thin-film growth from (In,Ga)2Se3 precursors and found that the evolution of the microstructure and intrinsic native defects depends on the compositional changes that occur as the film transitions from being Cu rich to In(Ga) rich.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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