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Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

Published online by Cambridge University Press:  26 February 2011

Koh Era
Affiliation:
National Institute for Research in Inorganic Materials Namiki 1-1, Tsukuba, Ibaraki 305, Japan
Osamu Mishima
Affiliation:
National Institute for Research in Inorganic Materials Namiki 1-1, Tsukuba, Ibaraki 305, Japan
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Abstract

In cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Mishima, O., Era, K., Tanaka, J., and Yamaoka, S., Appl. Phys. Lett. 53, 962 (1988).CrossRefGoogle Scholar
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Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities
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