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Cu CMP Edge Uniformity Improvement Studies for 32 nm Technology Node and Beyond

Published online by Cambridge University Press:  01 February 2011

John H Zhang
Affiliation:
jzhan@us.ibm.com, STMicroelectronics, Hopewell Junction, New York, United States
Laertis Economikos
Affiliation:
econol@us.ibm.com, IBM, Hopewell Junction, New York, United States
Wei-tsu Tseng
Affiliation:
weitsuts@us.ibm.com, IBM, Hopewell Junction, New York, United States
Jihong Choi
Affiliation:
jchoi@us.ibm.com, GlobalFoundries, Hopewell Junction, New York, United States
Qiang Fang
Affiliation:
qfang@us.ibm.com, GlobalFoundries, Hopewell Junction, New York, United States
Teck Jung Tang
Affiliation:
tangtj@us.ibm.com, GlobalFoundries, Hopewell Junction, New York, United States
Joe Salfelder
Affiliation:
JOE_SALFELDER@amat.com, Apllied Materials, Hopewell Junction, New York, United States
Connie Truong
Affiliation:
ctruong@us.ibm.com, IBM, Hopewell Junction, New York, United States
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Abstract

Studies of the wafer edge uniformity step by step, from hard mask deposition, reactive ion etch, electroplating to post Cu CMP had been done using scanning electron microscopy (SEM) measurements, showed that the major wafer non-uniformity comes from the Cu CMP step. Improvement of Cu CMP edge uniformity had been achieved through engineering of platen 1 using real time profile control as well as CMP head zone pressure adjustment and platen 3 slurry optimizations

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Tseng, W-T, Kioussis, D., Manikonda, S., Kim, H-K, Choi, J., Zhao, F., Economikos, L., Klymko, N., Chace, M., Molis, S., Chae, M., Engbrecht, E., Zielinski, E., Truong, C., and Watts, D. , ECS Transaction, 13, 2, 293-306 (2008).Google Scholar
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5 Choi, J., Tseng, W-T, Kim, H.K., Economikos, L., Fang, Q., Zielinskil, E., Engbrecht, E., Child, C., Chae, M., and Moon, Y., Proc. of Advanced Metallization Conference p449455, San Diego, California, Sept. 23-25, 2008 Google Scholar
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