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Crystallization in the limit of ultra thin layers- A new crystallization model

Published online by Cambridge University Press:  17 March 2011

Margit Zacharias  and
Peter Streitenberger
Margit Zacharias
Affiliation:
Max- Planck- Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
Peter Streitenberger
Affiliation:
Institut für Experimentelle Physik, Otto-von- Guericke Universität, PF 4120, 39016 Magdeburg
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Abstract

Annealing of amorphous Si/SiO2 multilayer produces nanocrystals embedded between oxide interfaces with the size of the nanocrystals depending on the Si layer thickness. It is found that the crystallization temperature is strongly enhanced by the presence of the oxide interface and follows an exponential law. A model is presented, which derives the exponential dependence taking into account the interface energies, the thickness of the layers, the melting point of the system, and the bulk amorphous crystallization temperature. The critical crystallization radius and the critical thickness of the Si layer are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F6.2.1
Copyright
Copyright © Materials Research Society 2001

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