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Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

Published online by Cambridge University Press:  10 February 2011

M. Levy
Affiliation:
Department of Applied Physics, Columbia University, Street, New York, NY; 10027
R.M. Osgood Jr
Affiliation:
Department of Applied Physics, Columbia University, Street, New York, NY; 10027
A. Kumar
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY
H. Bakhru
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY
R. Liu
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
E. Cross
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
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Abstract

The epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Levy, M., Osgood, R. M. Jr, Kumar, A., Bakhru, H., Appl. Phys. Lett. 71, 2617 (1997).CrossRefGoogle Scholar
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6. Hansen, P., in Proceedings of the International School of Physics Enrico Fermi, edited by Paoletti, A. (North Holland, New York, 1978), p.61.Google Scholar
7. Levy, M., Osgood, R. M. Jr, Kumar, A., and Bakhru, H., J. Appl. Phys. 83, (1998).10.1063/1.367673CrossRefGoogle Scholar

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