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Crystal Growth of Ternary and Quaternary Alkali Metal Bismuth Chalcogenides Using Bridgman Technique

Published online by Cambridge University Press:  01 February 2011

Theodora Kyratsi
Affiliation:
Dept. of Chemistry and Center of Fundamental Materials Research, Michigan State University, East Lansing MI 48824–1322
Duck-Young Chung
Affiliation:
Dept. of Chemistry and Center of Fundamental Materials Research, Michigan State University, East Lansing MI 48824–1322
Kyoung-Shin Choi
Affiliation:
Dept. of Chemistry and Center of Fundamental Materials Research, Michigan State University, East Lansing MI 48824–1322
Jeffrey S. Dick
Affiliation:
Dept of Physics, University of Michigan, Ann Arbor MI 48109
Wei Chen
Affiliation:
Dept of Physics, University of Michigan, Ann Arbor MI 48109
Ctirad Uher
Affiliation:
Dept of Physics, University of Michigan, Ann Arbor MI 48109
Mercouri Kanatzidis
Affiliation:
Dept. of Chemistry and Center of Fundamental Materials Research, Michigan State University, East Lansing MI 48824–1322
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Abstract

Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric applications. These materials have needlelike morphology so they are highly anisotropic in their electrical and thermal properties. In order to achieve long and well-oriented needles for which, consequently, the best thermoelectric performance is expected, we developed a modified Bridgman technique for their bulk crystal growth. The preliminary results of our crystal growth experiments as well as electrical conductivity, Seebeck coefficient and thermal conductivity for the compounds obtained from this technique are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1. Chung, D-Y, Iordanidis, L., Choi, K-S and Kanatzidis, M.G., Bull. Korean Chem. Soc., 19, 12 p. 1285 (1998)Google Scholar
2. Brazis, P.W., Rocci-Lane, M.A., Ireland, J.R., Chung, D-Y, Kanatzidis, M.G. and Kannewurf, C.R., Proceedings of 18th International Conference on Thermoelectrics 1999, p. 619.Google Scholar
3. Kanatzidis, M.G., Chung, D-Y, Iordanidis, L., Choi, K-S, Brazis, P., Rocci, M., Hogan, T. and Kannewurf, C.R., Mat. Res. Soc. Symp. Proc. 1998, vol. 545, p. 233 Google Scholar
4. Chung, D-Y, Choi, K-S, Iordanidis, L., Schindler, J.L., Brazis, P.W., Kannewurf, C.R., Chen, B., Hu, S., Uher, C. and Kanatzidis, M.G., Chem. Mat. 9, 12, 3060 (1997)CrossRefGoogle Scholar
5. Kyratsi, Th., Chung, D-Y, Dick, J.S., Chen, W., Uher, C., Kanatzidis, M.G., work in progress. Google Scholar
6. Choi, K-S, Chung, D-Y, Mrotzek, A., Brazis, P., Kannewurf, C.R., Uher, C., Chen, W., Hogan, T. and Kanatzidis, M.G., submitted. Google Scholar
7. Encyclopedia of Materials Science and Engineering, Thermoelectric Semiconductors, MIT Press: Cambridge, MA, Pergamon Press: Oxford, 1986, p. 4968 Google Scholar

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Crystal Growth of Ternary and Quaternary Alkali Metal Bismuth Chalcogenides Using Bridgman Technique
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