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Cpm Measurenents on a-Si:H Based Pin Solar Cells: Thickness and Bias Voltage Effects

Published online by Cambridge University Press:  25 February 2011

H. Rübel
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
M. Gorn
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
B. Scheppat
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
R. Geyer
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
P. Lechner
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
N. Kniffler
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
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Abstract

We use measurements of subbandgap photocurrent spectra on films, barrier structures and pin cells of different thicknesses to estimate the valence band tailing and to characterize the dangling bond defect region. Large differences in signal sizes in the structures are observed and particularly for thick and thin pin-diodes, the dependence of the signal on voltage bias is discussed. In pin-diodes, these effects can be explained by a change of defect occupation in the i-layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

/l/ Geyer, R., Gorn, M., Kniffler, N., Lechner, P., Rübel, H. and Scheppat, B., Proc. of the 20th IEEE PVSC Conf.(Las Vegas, 1988) to be publishedGoogle Scholar
/2/ Crandall, R.S., Phys. Rev. Lett. 44, 799 (1980)CrossRefGoogle Scholar
/3/ Kočka, J., Vaněček, M., Stíka, O., Tring, O. Dung, Stucklík, J. and Tŕíska, A., Proc. of the 8th European PV Solar Energy Conf.(Florence, 1988) 724Google Scholar
/4/ Kida, H., Jamagishi, H., Kamada, T., Okamoto, H., and Hamakawa, Y., Techn. Digest of the Int. PVSEC-l Conf. (Kobe, 1984) 417Google Scholar
/5/ Itozaki, H., Fujita, N., Proc. Mat. Res. Soc. Symp. Vol.95, 507 (1987)CrossRefGoogle Scholar
/6/ Hegedus, S.S., Cebulka, J.M., Proc. of the 20th IEEE PVSC Conf. (Las Vegas, 1988) to be publishedGoogle Scholar

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Cpm Measurenents on a-Si:H Based Pin Solar Cells: Thickness and Bias Voltage Effects
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