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Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs

Published online by Cambridge University Press:  25 February 2011

X. W. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Watté
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnétisme, K.U. Leuven, B-3001 Leuven, Belgium
K. Wuyts
Affiliation:
lnteruniversitair Micro-Electronica Centrum (IMEC), Kapeldreef, 75, B-3001, Leuven, Belgium
W. Swider
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R.E. Silverans
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnétisme, K.U. Leuven, B-3001 Leuven, Belgium
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

The structural evolution of Ni/Au/Te/Au contacts on n-GaAs (001) was examined, in correlation with their electrical properties as a function of rapid thermal annealing in the temperature range 350 - 600°C. It was found that heating at temperatures ≥ 550°C results in the formation of ohmic contacts, while contacts annealed at lower temperatures remain nonohmic. Transmission electron microscopy revealed that heating ≥ 450°C leads to extensive reactions between Ni/Au/Te/Au and GaAs and deep spike formation into the GaAs. The major reaction products were identified as NiAs and β-AuGa. Ga2Te3 grains, growing epitaxially on GaAs, were detected only in 550°C annealed samples. Heating to 600°C caused considerable Ga2Te3 loss. Implications of these results concerning the ohmic contact formation mechanism are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1 Robinson, G.Y., in Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by Wilmsen, C.W., (Plenum Press, New York, 1985), p. 73.CrossRefGoogle Scholar
2 Sebestyen, T., Solid-State Electron. 25, 543 (1982).CrossRefGoogle Scholar
3 Palmstrøm, C.J., Schwarz, S.A., Yablonovitch, E., Harbison, J.P., Schwartz, C.L., Florez, L.T., Gmitter, T.J., Marshall, E.D., and Lau, S.S., J. Appl. Phys. 67, 334 (1990).CrossRefGoogle Scholar
4 Wuyts, K., Watté, J., Vanderstraeten, H., Langouche, G., Silverans, R.E., Münder, H., Berger, M.G., Liith, H., Van Hove, M., Bender, H., and Van Rossum, M., Phys. Rev. B 45, 11863 (1992) and references therein.CrossRefGoogle Scholar
5 Watté, J., Wuyts, K., Silverans, R.E., Van Hove, M., and Van Rossum, M., J. Appl. Phys. 75, 2055(1994).CrossRefGoogle Scholar
6 Lin, X.W., Piotrowska, A., Kaminska, E., Liliental-Weber, Z., Washburn, J., and Weber, E., Appl. Phys. Lett. 62, 2995 (1993).CrossRefGoogle Scholar
7 Piotrowska, A., Kaminska, E., Lin, X. W., Liliental-Weber, Z., Washburn, J., Weber, E., Gierlotka, S., Adamczewska, J., Kwiatkowski, S., and Turos, A., J. Vac. Sci. Technol. B 11, 572 (1993) and references therein.CrossRefGoogle Scholar
8 Villars, P. and Calvert, L.D., Pearson’s Handbook of Crystallographic Data for Intermetallic Phases, vol. 2 (American Society for Metals, Metals Park, OH, 1985).Google Scholar
9 Guymont, M., Tomas, A., and Guittard, M., Philos. Mag. A 66, 133 (1992).CrossRefGoogle Scholar

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