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Conventional and Rapid Thermal Annealing of Paramagnetic Oxygen Vacancy Defects (E'1 Centers) in Ion Implanted Amorphous SiO2: A Uni-Molcular Recombination Process

Published online by Cambridge University Press:  25 February 2011

A. Golanski ,
N. Chan Tung ,
J.C. Pfister  and
T. Nicolle
A. Golanski
Affiliation:
Centre National d'Etudes des Télécommunications (CNET - Grenoble) BP. 98, 38243 Meylan, FRANCE
N. Chan Tung
Affiliation:
Centre National d'Etudes des Télécommunications (CNET - Grenoble) BP. 98, 38243 Meylan, FRANCE
J.C. Pfister
Affiliation:
Centre National d'Etudes des Télécommunications (CNET - Grenoble) BP. 98, 38243 Meylan, FRANCE
T. Nicolle
Affiliation:
Centre National d'Etudes des Télécommunications (CNET - Grenoble) BP. 98, 38243 Meylan, FRANCE
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Abstract

The irreversible thermal annealing behaviour of paramagnetic oxygen vacancy defects (E' centers) induced by 40 keV Ne+ and 140 keV Kr+ ion implantation in amorphous SiO2 has been studied by means of electron paramagnetic resonance. The reversible E'l⇆ B2 defect transformation occurring via a hole injection/trapping process under ionising radiation (190 keV H+) is used as a means of distinguishing a reversible modification of the defect charge state from irreversible annealing of oxygen vacancies. Irreversible thermal recovery is shown to occur between 500 and 900°C. Both conventional and tungsten lamp heater annealing results are compared to predictions based on Simpson and Sosin's model for diffusional recombination of spatially correlated Frenkel pairs and to a simple model for unimolecular recombination. The annealing behaviour observed is accounted for assuming a gaussian distribution in activation energy for diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 355
Copyright
Copyright © Materials Research Society 1985

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References

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