We propose a novel concept, namely, delta-doping of nanowires, to control the carrier mobility in nanowires. Different from the traditional doping, our approach features doping of a nanowire only on its surface. Our calculations based on Anderson models for nanowires with surface disorder showed remarkably different results from the traditional doping where impurities are distributed inside the nanowire. We found that there exist transition energy levels similar to the mobility edges in three-dimensional disordered systems. If the Fermi energy is below the transition energy level, the delta-doped nanowire is simply an insulator. But once the Fermi energy exceeds this energy level, the carrier mobility increases significantly. The transition levels are almost independent of the degree of disorder in the regime of strong disorder.