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Control of Doping and Electronic Transport in Nanowires

Published online by Cambridge University Press:  15 March 2011

Jianxin Zhong
Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6016
G. Malcolm Stocks
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6114
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We propose a novel concept, namely, delta-doping of nanowires, to control the carrier mobility in nanowires. Different from the traditional doping, our approach features doping of a nanowire only on its surface. Our calculations based on Anderson models for nanowires with surface disorder showed remarkably different results from the traditional doping where impurities are distributed inside the nanowire. We found that there exist transition energy levels similar to the mobility edges in three-dimensional disordered systems. If the Fermi energy is below the transition energy level, the delta-doped nanowire is simply an insulator. But once the Fermi energy exceeds this energy level, the carrier mobility increases significantly. The transition levels are almost independent of the degree of disorder in the regime of strong disorder.

Research Article
Copyright © Materials Research Society 2004

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