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Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation

Published online by Cambridge University Press:  28 February 2011

T. Komoda
Affiliation:
Matsushita Electric Works, Ltd, UK R&D Laboratory The Surrey Research Park, Guildford, Surrey, GU2 5YG, UK
J.P. Kelly
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
A. Nejm
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
K.P. Homewood
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
P.L.F Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B.J. Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
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Abstract

Implantation of Si+ ions into thermal oxides grown on silicon has been used to synthesise a two phase structure consisting of Si nanocrystals in a SiO2 matrix. Various processing conditions have been used in order to modify the size and population distributions of the Si inclusions. Photoluminescence spectra have been recorded from samples annealed in nitrogen, forming gas and oxygen. Both red and blue shifts of the luminescence peaks have been observed. It is concluded that the photoluminescence is a consequence of the effects of quantum confinement but is also dependent on the presence of irradiation-induced defects or Si/SiO2 interface states.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation
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