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Contamination Problems of Amorphous Silicon N-I-P Solar Cells on Metal Substrates

Published online by Cambridge University Press:  10 February 2011

M. Goetz
Affiliation:
Laboratoire de Microtechnique (LMT) de l'Université de Neuchâtel et de l'EPFL, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland, goetz@imt.unine.ch
H. Keppner
Affiliation:
Laboratoire de Microtechnique (LMT) de l'Université de Neuchâtel et de l'EPFL, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland, goetz@imt.unine.ch
P. Pernet
Affiliation:
Laboratoire de Microtechnique (LMT) de l'Université de Neuchâtel et de l'EPFL, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland, goetz@imt.unine.ch
W. Hotz
Affiliation:
Alusuisse-Lonza Services AG, Bad. Bahnhofstr. 16, CH-8212 Neuhausen a. Rhf., Switzerland
A. Shah
Affiliation:
Laboratoire de Microtechnique (LMT) de l'Université de Neuchâtel et de l'EPFL, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland, goetz@imt.unine.ch
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Abstract

Commercial aluminium and stainless steel sheets were used as substrates for thin film silicon solar cell deposition. The influence of elemental contamination and disturbed film growth on solar cell performance and yield were studied. Diffusion during film growth was found to be more pronounced than thermally activated interdiffusion of existing films. Surface irregularities of the substrate are shown to reduce the fill factor of the solar cell. Initial efficiencies of 8.5% with single-junction amorphous silicon solar cells on both types of metal sheets were reached.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. United Solar Systems Corp., Troy, Michigan USAGoogle Scholar
2. Kattelus, H.P. and Nicolet, M-A. in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P.S., Noyes Publications, Park Ridge, New Jersey, 1988, p. 439 Google Scholar
3. Haque, M.S., Naseem, H.A., Brown, W.D., J. Appl. Phys. 75 (8), 3928 (1994)CrossRefGoogle Scholar
4. Voc = Open-Circuit Voltage; FF = Fill Factor; Isc = Short-Circuit CurrentGoogle Scholar
5. Tatsumi, Y. and Ohsaki, H., Properties of Amorphous Silicon, INSPEC, London and New York, 1989, p. 469 Google Scholar
6. Typical diffusion speed in thin films: surface > grain boundries and dislocations > lattice, Wittwer, M., J. Vac. Sci. Technol. A 2 (2), 1984, p. 274 +grain+boundries+and+dislocations+>+lattice,+Wittwer,+M.,+J.+Vac.+Sci.+Technol.+A+2+(2),+1984,+p.+274>Google Scholar

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