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A Comprehensive Study of Effect of Composition on Resistive Switching of HfxAl1-xOy based RRAM devices by Combinatorial Sputtering

Published online by Cambridge University Press:  11 February 2015

Pankaj Kumbhare
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Paritosh Meihar
Affiliation:
Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Senthilkumar Rajarathinam
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Shikhar Chouhan
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Suhit Pai
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Neeraj Panwar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
U. Ganguly
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
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Abstract

We use the combinatorial sputter technique to simultaneously sputter HfO2 and Al2O3 targets to obtain a film of HfxAl1-xOy of specific compositions. The effect of oxide thickness, oxide composition (i.e. Hf:Al ratio) and oxygen gettering layer thickness on DC sweep based resistive switching performance of RRAM is investigated. The oxide thickness primarily affects forming voltage and causes the memory window to increase for the thinnest oxide (6 nm, other thicknesses – 12 nm, 18 nm). The composition of oxide has a non-linear effect on the memory window (high to low resistance ratio) and variability of resistance states whereas the variability of set voltage improves significantly for ternary oxide compared to individual binary oxides. Finally, electrode interlayer for oxygen-gettering is also critical where a thin Ti layer of 1.5nm maintains the memory window but reduces variability in HRS, LRS, reduces Vset and Vreset and improves the variability in Vset.

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Copyright
Copyright © Materials Research Society 2015 

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References

Govoreanu, B., Kar, G.S. et al. , “10x10nm2 Hf/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation”, IEDM, 2011.Google Scholar
Fantini, A., Goux, L. et al. , “Intrinsic Switching Variability in HfO2 RRAM ”, International Memory Workshop, 2013.Google Scholar
Fantini, A., Goux, L. et al. , “Engineering of Hf1−xAlxOy amorphous dielectrics for high-performance RRAM applications”, International Memory Workshop, 2014.Google Scholar
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Walczyk, Ch. et al. , “On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration”, J. Vac. Sci. Technol. B 29(1), Jan/Feb 2011.CrossRefGoogle Scholar

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A Comprehensive Study of Effect of Composition on Resistive Switching of HfxAl1-xOy based RRAM devices by Combinatorial Sputtering
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A Comprehensive Study of Effect of Composition on Resistive Switching of HfxAl1-xOy based RRAM devices by Combinatorial Sputtering
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A Comprehensive Study of Effect of Composition on Resistive Switching of HfxAl1-xOy based RRAM devices by Combinatorial Sputtering
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