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Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Technique

Published online by Cambridge University Press:  02 March 2011

Hideo Kiyota
Affiliation:
Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto 862-8652, Japan
Mikiteru Higashi
Affiliation:
Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto 862-8652, Japan
Tateki Kurosu
Affiliation:
Department of Applied Computer Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Masafumi Chiba
Affiliation:
Department of Materials Chemistry, Tokai University, 317 Nishino, Numazu, Shizuoka 410-0395, Japan
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Abstract

Composition, bonding state, and electrical properties of CNx films formed by electro-chemical deposition using liquid acrylonitrile were studied. X-ray photoelectron spectra reveal that C, N, and O are major components of the deposited films. From analysis of C 1s and N 1s spectra, the major bonding state in the CNx film is attributed to a mixture of C≡N and partially hydrogenated C=N bond. Metal-insulator-semiconductor capacitors incorporating the CNx insulating layers are fabricated to evaluate the electrical properties of the deposited films. The lowest dielectric constant k of the CNx film is determined to be 2.6 from the accumulation capacitance and the thickness of the film. It is demonstrated that the CNx film formed by electrochemical deposition is a promising low-k material for use in ultralarge-scale integration multilevel interconnections.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

1. Aoki, H., Masuzumi, T., Hara, M., Watanabe, D., Kimura, C., and Sugino, T., Thin Solid Films 518, 2012 (2010).CrossRefGoogle Scholar
2. Tokuyama, S., Hara, M., Mazumder, M. K., Watanabe, D., Kimura, C., Aoki, H., and Sugino, T., Jpn. J. Appl. Phys. 47, 2492 (2008).10.1143/JJAP.47.2492CrossRefGoogle Scholar
3. Wang, Z.L., Li, J.J., Sun, Z.H., Li, Y.L., Luo, Q., Gu, C.Z., and Cui, Z., Appl. Phys. Lett. 90, 133118 (2007).CrossRefGoogle Scholar
4. Grill, A. and Patel, V., J. Appl. Phys. 104, 024113 (2008).10.1063/1.2959341CrossRefGoogle Scholar
5. Aono, M. and Nitta, S., Diamond Relat. Mater. 11, 1219 (2002).CrossRefGoogle Scholar
6. Muhl, S. and Mendez, J. M., Diamond Relat. Mater. 8, 1809 (1999).CrossRefGoogle Scholar
7. Fu, Q., Jiu, J.T., Wang, H., Cao, C.B., and Zhu, H.S., Chem. Phys. Lett. 301, 87 (1999).CrossRefGoogle Scholar
8. Fu, Q., Jiu, J.T., Cai, K., Wang, H., Cao, C.B., and Zhu, H.S., Phys. Rev. B 59, 1693 (1999).CrossRefGoogle Scholar
9. Wang, H., Kiyota, H., Miyo, T., Kitaguchi, K., Shiga, T., Kurosu, T., Zhu, H.S., and Iida, M., Diamond Relat. Mater. 9, 1307 (2000).10.1016/S0925-9635(00)00227-2CrossRefGoogle Scholar
10. Kiyota, H., Gamo, H., Nishitani-Gamo, M., and Ando, T., Jpn. J. Appl. Phys. 47, 1050 (2008).CrossRefGoogle Scholar
11. McCann, R., Roy, S. S., Papakonstantinou, P., McLaughlin, J. A., and Ray, S. C., J. Appl. Phys. 97, 073522 (2005).10.1063/1.1874300CrossRefGoogle Scholar
12. Marton, D., Boyd, K. J., Al-Bayati, A. H., Todorov, S. S., and Rabalais, J. W., Phys. Rev. Lett. 73, 118 (1994).CrossRefGoogle Scholar
13. Zhao, J.P., Chen, Z.Y., Yano, T., Ooie, T., and Yoneda, M., J. Appl. Phys. 89, 1580 (2001).CrossRefGoogle Scholar
14. Ohta, R., Lee, K.H., Saito, N., Inoue, Y., Sugimura, H., and Takai, O., Thin Solid Films 434, 296 (2003).CrossRefGoogle Scholar
15. Hammer, P., Victoria, N. M., and Alvarez, F., J. Vac. Sci. Technol. A 16, 2941 (1998).CrossRefGoogle Scholar
16. Wei, J., J. Appl. Phys. 92, 6525 (2002).10.1063/1.1518137CrossRefGoogle Scholar

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Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Technique
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