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Complete Characterization of AlxGa1-xN/InxGa1-xN/GaN Devices by Sims

Published online by Cambridge University Press:  10 February 2011

C. Huang
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive, Redwood City, CA94063
S. Mitha
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive, Redwood City, CA94063
J. W. Erickson
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive, Redwood City, CA94063
R. Clark-Phelps
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive, Redwood City, CA94063
Jack Sheng
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive, Redwood City, CA94063
Y. Gao
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive, Redwood City, CA94063
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Abstract

SIMS analysis was applied to the characterization of GaN, AlGaN/GaN and InGaN/GaN grown by MOCVD. Such characterization enables the control of purity and doping, and the determination of growth rate and alloy composition. The analysis can be performed on finished optoelectronic and electronic devices and this makes SIMS technique a powerful tool for failure analysis, reverse engineering, and concurrent engineering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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3. Asif Khan, M. in Volume 415, Materials Research Society Symposium Proceedings Series, 1995 Symposium BB: Metal-organic Chemical Vapor Deposition of Electronic Ceramics II.Google Scholar
4. Gao, Y., J. Appl. Phys. 64(7), 3762(1988)Google Scholar
5. Gao, Y., Kirchoff, J., Mitha, S., Erickson, J. W., Huang, C., in these proceedingsGoogle Scholar

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Complete Characterization of AlxGa1-xN/InxGa1-xN/GaN Devices by Sims
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Complete Characterization of AlxGa1-xN/InxGa1-xN/GaN Devices by Sims
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