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Competitive Role of Impurities on the Electrical Activity of as-grown Σ=13, Σ=25 and Deformed Σ=9 Grain boundaries in p-type Silicon Bi-crystals

Published online by Cambridge University Press:  29 August 2012

S. Gaiaschi
Affiliation:
Dipartimento di Scienza dei Materiali and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR) Università degli Studi Milano Bicocca
A. El Kouadri Boudjelthia
Affiliation:
CEMHTI-CNRS UPR 3079, Site Cyclotron ,3A rue de la Férolerie, F- 45071 Orléans
G. Regula
Affiliation:
IM2NP, CNRS UMR 7334, Aix Marseille Université, F-13397 Marseille
N. Burle
Affiliation:
IM2NP, CNRS UMR 7334, Aix Marseille Université, F-13397 Marseille
A. Mesli
Affiliation:
IM2NP, CNRS UMR 7334, Aix Marseille Université, F-13397 Marseille
T. Neisius
Affiliation:
CIM-PACA, Aix Marseille Université, F-13397 Marseille
M. Acciarri
Affiliation:
Dipartimento di Scienza dei Materiali and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR) Università degli Studi Milano Bicocca
V. Mong The Yen
Affiliation:
IM2NP, CNRS UMR 7334, Aix Marseille Université, F-13397 Marseille
O. Palais
Affiliation:
IM2NP, CNRS UMR 7334, Aix Marseille Université, F-13397 Marseille
E. Ntsoenzok
Affiliation:
CEMHTI-CNRS UPR 3079, Site Cyclotron ,3A rue de la Férolerie, F- 45071 Orléans
B. Pichaud
Affiliation:
IM2NP, CNRS UMR 7334, Aix Marseille Université, F-13397 Marseille
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Abstract

Electrical properties of grain boundaries grown by Czochralski process were studied by microwave phase shift (μW-PS) and electron beam induced current (EBIC), before and after gold diffusion at 700°C. As-grown samples had similar doping levels determined by four-point probe measurements but somewhat different oxygen concentrations, obtained by Fourier transform infrared spectroscopy (FTIR). It is shown that the increase of the grain boundary activity due to Au gathering at this planar defect can be hindered by native impurities (likely oxygen). EBIC and μW-PS techniques gave respectively electron diffusion lengths and lifetime values, both in good agreement. EBIC images on deformed Σ =9 showed that extrinsic dislocations do not activate the grain boundary at 300K.

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Articles
Copyright
Copyright © Materials Research Society 2012

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Competitive Role of Impurities on the Electrical Activity of as-grown Σ=13, Σ=25 and Deformed Σ=9 Grain boundaries in p-type Silicon Bi-crystals
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Competitive Role of Impurities on the Electrical Activity of as-grown Σ=13, Σ=25 and Deformed Σ=9 Grain boundaries in p-type Silicon Bi-crystals
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Competitive Role of Impurities on the Electrical Activity of as-grown Σ=13, Σ=25 and Deformed Σ=9 Grain boundaries in p-type Silicon Bi-crystals
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