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Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
Published online by Cambridge University Press: 21 February 2011
Abstract
Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCI3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-Oxygen compound having been formed (ie Al2O3).
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- Copyright © Materials Research Society 1994
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