Skip to main content Accessibility help
×
Home
Hostname: page-component-65dc7cd545-8rn5k Total loading time: 0.179 Render date: 2021-07-24T08:58:51.327Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

Carl-Mikael Zetterling
Affiliation:
Royal Institute of Technology, Solid State Electronics, Kista-Stockholm, Sweden
Mikael Östling
Affiliation:
Royal Institute of Technology, Solid State Electronics, Kista-Stockholm, Sweden
Get access

Abstract

Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCI3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-Oxygen compound having been formed (ie Al2O3).

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Bhatnagar, M. and Baliga, B. J., IEEE Trans. Electron Devices, 40, 645, (1993).CrossRefGoogle Scholar
2. Davis, R. F., Kelner, G., Shur, M., Palmour, J. W. and Edmond, J. A., Proc. IEEE, 79, 677, (1991).CrossRefGoogle Scholar
3. Ivanov, P. A. and Chelnokov, V. E., Semicond. Sci. Technol., 7, 863, (1992).CrossRefGoogle Scholar
4. Singh, N. and Rys, A., J. Appl. Phys., 73, 1279, (1993).CrossRefGoogle Scholar
5. Zheng, Z., Tressler, R. E. and Spear, K. E., J. Electrochem. Soc., 137, 854, (1990).CrossRefGoogle Scholar
6. Ouisse, T., Bécourt, N., Jaussaud, C. and Templier, F., J. Appl. Phys., 75, 604, (1994).CrossRefGoogle Scholar
7. Zetterling, C-M. and Östling, M., Presented at ICSCRM '93, Washington D. C., 1993 (In press).Google Scholar
8. Palmour, J. W., Davis, R. F., Kong, H. S., Corcoran, S. F. and Griffis, D. P., J. Electrochem. Soc., 136, 502, (1989).CrossRefGoogle Scholar
9. Nicollian, E. H. and Brews, J. R., MOS Physics and Technology. 1st ed. (Wiley, New York, 1982)Google Scholar
10. Petit, O. J. B., Neudeck, P. G., Matus, L. G. and Powell, J. A., 4th International Conference on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials, (Springer Proceedings in Physics, Vol 71, 190, Springer-Verlag, 1991).CrossRefGoogle Scholar
11. Suzuki, A., Ashida, H., Fumi, N., Mameno, K. and Matsunami, H., Jpn. J. Appl. Phys., 21, 579, (1982).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *