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Comparison of N- And P-Type Ingaas/Inp Quantum Well Infrared Photodetectors

Published online by Cambridge University Press:  10 February 2011

D.K. Sengupta
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
J.I. Malin
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
S.L. Jackson
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
W. Fang
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
W. Wu
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
H.C. Kuo
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
C. Rowe
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
S.L. Chuang
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
K.C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
J.R. Tucker
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
J. W. Lyding
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
M. Feng
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
G.E. Stillman
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
H.C. Liu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1AOR6, Canada
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Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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Comparison of N- And P-Type Ingaas/Inp Quantum Well Infrared Photodetectors
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