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A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

A.J. Ptak
Affiliation:
Department of Physics, Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
T.H. Myers
Affiliation:
Department of Physics, Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
Lijun Wang
Affiliation:
Department of Physics, Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
N.C. Giles
Affiliation:
Department of Physics, Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
M. Moldovan
Affiliation:
Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
C.R. Da Cunha
Affiliation:
Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
L.A. Hornak
Affiliation:
Department of Electrical Engineering, West Virginia University, Morgantown, WV 26506
C. Tian
Affiliation:
Evans Analytical Group, Charles Evans and Associates, Sunnyvale, CA 94086
R. A. Hockett
Affiliation:
Evans Analytical Group, Charles Evans and Associates, Sunnyvale, CA 94086
S. Mitha
Affiliation:
Evans Analytical Group, Charles Evans and Associates, Sunnyvale, CA 94086
P. Van Lierde
Affiliation:
Evans Analytical Group, Charles Evans and Associates, Sunnyvale, CA 94086
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Abstract

Step-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy
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